AI Article Synopsis
- Monolayer MoS is a semiconductor that has potential to enhance microelectronic devices but is sensitive to heat and oxidative conditions.
- This study examines how molybdenum oxides (MoO) particles influence the oxidation of MoS using various spectroscopy techniques.
- Findings reveal that MoS with MoO oxidizes at a lower temperature (100 °C) compared to earlier studies, highlighting the need to remove MoO for better thermochemical stability in advanced applications.
Article Abstract
Monolayer MoS is a promising semiconductor to overcome the physical dimension limits of microelectronic devices. Understanding the thermochemical stability of MoS is essential since these devices generate heat and are susceptible to oxidative environments. Herein, the promoting effect of molybdenum oxides (MoO ) particles on the thermal oxidation of MoS monolayers is shown by employing operando X-ray absorption spectroscopy, ex situ scanning electron microscopy and X-ray photoelectron spectroscopy. The study demonstrates that chemical vapor deposition-grown MoS monolayers contain intrinsic MoO and are quickly oxidized at 100 °C (3 vol% O/He), in contrast to previously reported oxidation thresholds (e.g., 250 °C, ≤ 1 h in the air). Otherwise, removing MoO increases the thermal oxidation onset temperature of monolayer MoS to 300 °C. These results indicate that MoO promote oxidation. An oxide-free lattice is critical to the long-term stability of monolayer MoS in state-of-the-art 2D electronic, optical, and catalytic applications.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8097340 | PMC |
| http://dx.doi.org/10.1002/advs.202002768 | DOI Listing |
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