Atomic layer deposition method was used to grow thin films consisting of ZrOand MnOlayers. Magnetic and electric properties were studied of films deposited at 300 °C. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as the dependence of growth rate on the deposition temperature and film crystallinity. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO, while the manganese oxide was shown to consist of cubic MnOand tetragonal MnOphases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics.
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