We report on the possibility of detecting hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multiterminal device with ferromagnetic contacts near the top surface, local spin features of the chiral edge modes are unveiled. We find local spin polarization at the hinges that inverts the sign between the top and bottom surfaces. At the opposite edge, the topological state with inverted spin polarization propagates in the reverse direction. A large resistance switch between forward and backward propagating states is obtained, driven by the matching between the spin polarized hinges and the ferromagnetic contacts. This feature is general to the ferromagnetic, antiferromagnetic, and canted antiferromagnetic phases, and enables the design of spin-sensitive devices, with the possibility of reversing the hinge spin polarization of the currents.
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http://dx.doi.org/10.1103/PhysRevLett.126.167701 | DOI Listing |
J Opt Soc Am A Opt Image Sci Vis
August 2024
We study properties of a light field at the tight focus of the superposition of two different-order cylindrical vector beams (CVBs). In the source plane, this superposition has a polarization singularity index amounting to the half-sum of the numbers of two constituent CVBs, while having neither spin angular momentum (SAM) nor transverse energy flow. We show that if the constituent CVBs have different-parity numbers, in the focal plane there occur areas that have opposite-sign longitudinal SAM projections, alongside areas of opposite-handed energy flows rotating on closed paths (clockwise and anticlockwise).
View Article and Find Full Text PDFACS Nano
January 2025
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Switchable order parameters in ferroic materials are essential for functional electronic devices, yet disruptions of the ordering can take the form of planar boundaries or defects that exhibit distinct properties from the bulk, such as electrical (polar) or magnetic (spin) response. Characterizing the structure of these boundaries is challenging due to their confined size and three-dimensional (3D) nature. Here, a chemical antiphase boundary in the highly ordered double perovskite PbMgWO is investigated using multislice electron ptychography.
View Article and Find Full Text PDFACS Cent Sci
January 2025
Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093, United States.
In quantum information science and sensing, electron spins are often purified into a specific polarization through an optical-spin interface, a process known as optically detected magnetic resonance (ODMR). Diamond-NV centers and transition metals are both excellent platforms for these so-called color centers, while metal-free molecular analogues are also gaining popularity for their extended polarization lifetimes, milder environmental impacts, and reduced costs. In our earlier attempt at designing such organic high-spin π-diradicals, we proposed to spin-polarize by shelving triplet = ±1 populations as singlets.
View Article and Find Full Text PDFMolecules
January 2025
School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China.
Developing a new type of circularly polarized luminescent active small organic molecule that combines high fluorescence quantum yield and luminescence dissymmetric factor in both solution and solid state is highly challenging but promising. In this context, we designed and synthesized a unique triarylborane-based [2.2]paracyclophane derivative, , in which an electron-accepting [(2-dimesitylboryl)phenyl]ethynyl group and an electron-donating -diphenylamino group are introduced into two different benzene rings of [2.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Department Physics and Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA.
In this paper, we review our work on the manipulation of magnetization in ferromagnetic semiconductors (FMSs) using electric-current-induced spin-orbit torque (SOT). Our review focuses on FMS layers from the (Ga,Mn)As zinc-blende family grown by molecular beam epitaxy. We describe the processes used to obtain spin polarization of the current that is required to achieve SOT, and we briefly discuss methods of specimen preparation and of measuring the state of magnetization.
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