Generic Approach for Contacting Thermoelectric Solid Solutions: Case Study in n- and p-Type MgSiSn.

Metallization (known as contacting) of thermoelectric (TE) legs is vital to the long-term performance of a TE device. It is often observed that the compositional changes in a TE solid solution may render a given contact material unsuitable due to a mismatch in the thermal expansion coefficient values. Finding suitable contact materials for TE solid solutions (which often are the best TE materials) remains a challenge. In this work, we propose a multilayer single-step approach in which the same combination of contact materials can be used for a wide compositional range in a solid solution. The outer layer is a metal foil, which helps in creating an Ohmic contact with the interconnects. The intermediate layer is a mixture of the TE material and a metal powder, which results in the formation of the diffusion barrier. The innermost layer is the TE material, which is the active component of the device. The strategy was applied on n- and p-doped MgSiSn with elemental Cu and Ni providing the desired interface functionalities. Single-step compaction was carried out using the monoblock sintering technique. Microscopic investigation reveals the formation of a well-bonded crack-free interface. Various intermetallic phases were identified at the interface, and the formation of the MgNiSn phase was found to be critical to prevent any interdiffusion of elements. Electrical contact resistance () measurements were conducted, and low values of 3 and 19 μΩ cm were measured in n- and p-type legs, respectively. The contacted TE legs were further annealed at 400 °C for 7 days to check their stability. Microstructural and electrical resistance measurements reveal minimal changes in the interface layer and values, indicating the workability of the multilayer technique.