Monolayer transition metal dichalcogenide (TMD) alloys have emerged as a unique material system for promising applications in electronics, optoelectronics, and spintronics due to their tunable electronic structures, effective masses of carriers, and valley polarization with various alloy compositions. Although spin-orbit engineering has been extensively studied in monolayer TMD alloys, the valley Zeeman effect in these alloys still remains largely unexplored. Here we demonstrate the enhanced valley magnetic response in MoWSe alloy monolayers and MoWSe/WS heterostructures probed by magneto-photoluminescence spectroscopy. The large factors of negatively charged excitons (trions) of MoWSe have been extracted for both pure MoWSe monolayers and MoWSe/WS heterostructures, which are attributed to the significant impact of doping-induced strong many-body Coulomb interactions on trion emissions under an out-of-plane magnetic field. Moreover, compared with the monolayer MoWSe, the slightly reduced valley Zeeman splitting in MoWSe/WS is a consequence of the weakened exchange interaction arising from -doping in MoWSe interlayer charge transfer between MoWSe and WS. Such interlayer charge transfer further evidences the formation of type-II band alignment, in agreement with the density functional theory calculations. Our findings give insights into the spin-valley and interlayer coupling effects in monolayer TMD alloys and their heterostructures, which are essential to develop valleytronic applications based on the emerging family of TMD alloys.
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http://dx.doi.org/10.1021/acsnano.0c10478 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
We study the Raman signature of stripe domains in monolayer WMoS alloys, characterized using experimental techniques and density functional theory (DFT) calculations. These stripe domains were found in star-shaped monolayer WS exhibiting a high concentration of molybdenum (Mo) atoms in its central region, and unique Raman peaks that were not previously reported. We attribute these peaks to the splitting of the original doubly degenerate E modes, arising from the lower symmetry of the W-Mo stripe domains.
View Article and Find Full Text PDFNat Commun
November 2024
Honda Research Institute USA, Inc., San Jose, CA, 95134, USA.
Nanoribbons (NRs) of atomic layer transition metal dichalcogenides (TMDs) can boost the rapidly emerging field of quantum materials owing to their width-dependent phases and electronic properties. However, the controllable downscaling of width by direct growth and the underlying mechanism remain elusive. Here, we demonstrate the vapor-liquid-solid growth of single crystal of single layer NRs of a series of TMDs (MeX: Me = Mo, W; X = S, Se) under chalcogen vapor atmosphere, seeded by pre-deposited and respective transition metal-alloyed nanoparticles that also control the NR width.
View Article and Find Full Text PDFSmall Methods
October 2024
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
Janus transition metal dichalcogenides (TMDs) are a novel class of 2D materials with unique mirror asymmetry. Plasma-assisted synthesis at room temperature is favored for producing Janus TMDs due to its energy efficiency and prevention of alloying. However, current methods require stringent control over growth conditions, risking defects or unintended materials.
View Article and Find Full Text PDFAdv Mater
November 2024
Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China.
Two dimension (2D) transition metal dichalcogenides (TMD) heterostructures have opened unparalleled prospects for next-generation electronic and optoelectronic applications due to their atomic-scale thickness and distinct physical properties. The chemical vapor deposition (CVD) method is the most feasible approach to prepare 2D TMD heterostructures. However, the synthesis of 2D vertical heterostructures faces competition between in-plane and out-of-plane growth, which makes it difficult to precisely control the growth of vertical heterostructures.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2024
School of Advanced Fusion Studies and AI Semiconductor, University of Seoul, Seoul 02504, Republic of Korea.
van der Waals heterojunctions utilizing two-dimensional (2D) transition-metal dichalcogenide (TMD) materials have emerged as focal points in the field of optoelectronic devices, encompassing applications in light-emitting devices, photodetectors, solar cells, and beyond. In this study, we transferred few-atomic-layer films of compositionally graded ternary MoSTe alloys onto metal-organic chemical vapor deposition-grown molybdenum disulfide (MoS) as p- and n-type structures, leading to the creation of a van der Waals vertical heterostructure. The characteristics of the fabricated MoSTe/MoS vertical-stacked heterojunction were investigated considering the influence of tellurium (Te) incorporation.
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