Preparation of Al-Si alloys with silicon cutting waste from diamond wire sawing process.

J Environ Manage

School of Metallurgy, Northeastern University, Shenyang, 110819, PR China. Electronic address:

Published: July 2021

AI Article Synopsis

  • Large amounts of silicon cutting waste (SCW) from Si wafer production were transformed into Al-Si alloys by mixing SCW with aluminum powder and smelting it at various temperatures (1000 °C, 1200 °C, 1500 °C).
  • The study found that higher smelting temperatures increased the aggregation of Al-Si alloy particles, with significant yields of blocky alloys (0% at 1000 °C, 58% at 1200 °C, and 69% at 1500 °C).
  • Compacting the raw materials enhanced the yields further to 65%, 72%, and 79% at the respective temperatures, with silicon contents also rising slightly at higher temperatures.
  • The

Article Abstract

Large amounts of silicon cutting waste (SCW) are generated during Si wafers producing process. In this paper, SCW was mixed with Al powder to prepare Al-Si alloys by a one-step smelting process in corundum crucibles. The influences of smelting temperature (1000 °C, 1200 °C and 1500 °C) on the products of each zone (surface layer zone, loose granular zone and blocky products zone) were investigated. Al-Si alloys in the form of granular and blocky were prepared and the blocky Al-Si alloys mainly concentrated in the blocky products zone. The increase of smelting temperature can promote the aggregation of Al-Si alloy particles. The yields of Al-Si alloy blocks obtained at 1000 °C, 1200 °C and 1500 °C were 0%, 58% and 69%, respectively. The Si contents of Al-Si alloy blocks at 1200 °C and 1500 °C were 15.8 wt% and 17.1 wt% respectively. After compacting the raw materials, the yields of the blocky Al-Si alloys obtained at 1000 °C, 1200 °C and 1500 °C were increased to 65%, 72% and 79% and the corresponding Si contents of the blocky Al-Si alloys were increased to 16.0 wt%, 16.5 wt% and 17.3 wt% respectively. The reaction mechanism of the alloying process was also investigated.

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Source
http://dx.doi.org/10.1016/j.jenvman.2021.112548DOI Listing

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