In this paper, we investigate the V shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V with a glass substrate rarely changed even with increasing stress. Such a positive V shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C-V characterization on the metal-insulator-metal capacitor reveals that charging at the SiO/PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO/PI interface contributes to the V shift of the LTPS TFTs leading to image sticking.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8052436 | PMC |
http://dx.doi.org/10.1038/s41598-021-87950-0 | DOI Listing |
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