Chemical vapor deposition is a promising technique to produce MoC crystals with large area, controlled thickness, and reduced defect density. Typically, liquid Cu is used as a catalyst substrate; however, its high melting temperature (1085 °C) prompted research groups to search for alternatives. In this study, we report the synthesis of large-area thin MoC crystals at lower temperatures using liquid In, which is also advantageous with respect to the transfer process due to its facile etching. SEM, EDS, Raman spectroscopy, XPS, and XRD studies show that hexagonal MoC crystals, which are orthorhombic, grow along the [100] direction together with an amorphous carbon thin film on In. The growth mechanism is examined and discussed in detail, and a model is proposed. AFM studies agree well with the proposed model, showing that the vertical thickness of the MoC crystals decreases inversely with the thickness of In for a given reaction time.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8050042 | PMC |
| http://dx.doi.org/10.1038/s41598-021-87660-7 | DOI Listing |
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