Broadband Photoresponsive Bismuth Halide Hybrid Semiconductors Built with π-Stacked Photoactive Polycyclic Viologen.

Inorg Chem

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China.

Published: April 2021

Photoresponse ranges of commercially prevailing photoelectric semiconductors, typically Si and InGaAs, are far from fully covering the whole solar spectrum (∼295-2500 nm), resulting in insufficient solar energy conversion or narrow wave bands for photoelectric detection. Recent studies have shown that infinite π-aggregation of viologen radicals can provide semiconductors with a photoelectric response range covering the solar spectrum. However, controlled assembly of an infinite π-aggregate is still a great challenge in material design. Through directional self-assembly of electron-transfer photoactive polycyclic ligands, two crystalline inorganic-organic hybrid photochromic viologen-based bismuth halide semiconductors, ((Me)pytpy)[BiCl]·2HO [; (Me)pytpy = ,',″-trimethyl-2,4,6-tris(4-pyridyl)pyridine] and ((Me)pytpy)[BiCl]·HO (), have been synthesized. They represent the first series of pytpy-based photochromic compounds. After photoinduced coloration, the conductivities of both and increased. The radical products have electron absorption bands in the range of 200-1600 nm, exceeding that of Si. Both the conductivity and the photocurrent intensity of are stronger than those of , due to better planarity, tighter π-stacking, and higher degrees of overlap of ((Me)pytpy) cations. This study not only provides a new design idea for synthesizing radical-based multispectral photoelectric semiconductors but also enriches the family of electron-transfer photochromic compounds.

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http://dx.doi.org/10.1021/acs.inorgchem.0c03375DOI Listing

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