Auger recombination is an ultrafast and unnegligible photophysical process in colloidal semiconductor quantum dots (QDs) due to competition with charge separation or radiative recombination processes, pivotal for their applications ranging from bio-labeling, light-emitting diodes, QD lasing to solar energy conversion. Among diverse QDs, ternary chalcopyrite is recently receiving significant attention for its heavy-metal free property and remarkable optical performance. Given deficient understanding of the Auger process for ternary chalcopyrite QDs, CuInS QDs with various sizes are synthesized as a representative and the bi-exciton lifetime (τ) is derived by virtue of ultrafast time resolved absorption spectrum. The trend of τ varying with size is consistent with the universal scaling of τ versus QD volume (V): τ = γV. The scaling factor γ is 6.6 ± 0.5 ps·nm for CuInS QDs, and the bi-exciton Auger lifetime is 4-5 times slower than typical CdSe QDs with the same volume, suggesting reduced Auger recombination rate in ternary chalcopyrite. This work facilitates clearer understanding of Auger process and provides further insight for rational design of light-harvesting and emitting devices based on ternary chalcopyrite QDs.
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http://dx.doi.org/10.1364/OE.414327 | DOI Listing |
Heliyon
August 2023
Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh.
This paper theoretically outlines a new -AlSb/-AgInTe/-BaSi solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe (AIT) solar cell has been probed for finding the role of BaSi as a back surface field (BSF) layer.
View Article and Find Full Text PDFPhys Chem Chem Phys
June 2022
School of Physical Sciences, National Institute of Science Education and Research, HBNI, Bhubaneswar 752050, India.
The explicit forms of exchange-correlation (XC) potentials, which are not functional derivatives of any XC energy functional, are reasonably efficient in predicting the band gap of materials. The most successful example in this genre is the MBJ [F. Tran , , 2009 , 226401] exchange potential, which is based on the asymptotically correct Becke-Roussel (BR) exchange potential.
View Article and Find Full Text PDFJ Am Chem Soc
May 2022
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
The understanding of thermoelectric properties of ternary I-III-VI type (I = Cu, Ag; III = Ga, In; and VI = Te) chalcopyrites is less well developed. Although their thermal transport properties are relatively well studied, the relationship between the electronic band structure and charge transport properties of chalcopyrites has been rarely discussed. In this study, we reveal the unusual electronic band structure and the dynamic doping effect that could underpin the promising thermoelectric properties of CuAgGaTe compounds.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2021
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan.
Combining inorganic thermoelectric (TE) materials with conductive polymers is one promising strategy to develop flexible thermoelectric (FTE) films and devices. As most inorganic materials tried up until now in FTE composites are composed of scarce or toxic elements, and -type FTE materials are particularly desired, we combined the abundant, inexpensive, nontoxic Zn-doped chalcopyrite (CuZnFeS, = 0.01, 0.
View Article and Find Full Text PDFJ Am Chem Soc
April 2021
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
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