Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003543 | PMC |
| http://dx.doi.org/10.3390/nano11030788 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Remote epitaxial crystalline perovskites for ultrahigh-resolution micro-LED displays.
Nat Nanotechnol
January 2025
Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China.
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays. However, thin-film perovskites with inhomogeneous spatial distribution of light emission and unstable surface under lithography are incompatible with the micro-LED devices.
View Article and Find Full Text PDFEpitaxial CuO Thin Films Deposited from Solution: the Enabling Role of Cu Diffusion into the GaAs Substrate.
ACS Appl Mater Interfaces
January 2025
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel.
Cuprous oxide (CuO) thin films were chemically deposited from a solution onto GaAs(100) and (111) substrates using a simple three-component solution at near-ambient temperatures (10-60 °C). Interestingly, a similar deposition onto various other substrates including Si(100), Si(111), glass, fluorine-doped tin oxide, InP, and quartz resulted in no film formation. Films deposited on both GaAs(100) and (111) were found alongside substantial etching of the substrates.
View Article and Find Full Text PDFPhosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots.
ACS Nano
January 2025
Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.
InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties.
View Article and Find Full Text PDFAnisotropically Epitaxial P-N Heterostructures Actuating Efficient Z-Scheme Photocatalytic Water Splitting.
Small
January 2025
Key Laboratory of Eco-chemical Engineering, International S&T Cooperation Foundation of Eco-chemical Engineering and Green Manufacture, College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China.
Crafting anisotropically epitaxial p-n heterostructures with Z-scheme charge transmission is a promising avenue toward excellent photocatalytic efficiency, yet the large lattice mismatch and diverse crystal growth habits between components have often arisen as a big challenge to this goal. Here, anisotropically epitaxial p-n heterostructures with 19.8% lattice mismatch are obtained via a dynamics-mediated seeded growth tactic under reaction temperature as low as 60 °C.
View Article and Find Full Text PDFInfrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.
Nanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!