AI Article Synopsis
- Trap states in semiconductor nanocrystals, like CdSe nanoplatelets, can significantly impact photoluminescence by causing changes in intensity and timing of emitted light.
- These states are difficult to study due to their elusive nature, but the research explores their effects through "delayed emission" and "trap emission" at both ensemble and single-particle levels.
- Findings show that reversible hole trapping leads to delayed and trap photoluminescence with different lifetimes, while highlighting the extensive variability of trap states observed even in individual particles.
Article Abstract
Trap states can strongly affect semiconductor nanocrystals, by quenching, delaying, and spectrally shifting the photoluminescence (PL). Trap states have proven elusive and difficult to study in detail at the ensemble level, let alone in the single-trap regime. CdSe nanoplatelets (NPLs) exhibit significant fractions of long-lived "delayed emission" and near-infrared "trap emission". We use these two spectroscopic handles to study trap states at the ensemble and the single-particle level. We find that reversible hole trapping leads to both delayed and trap PL, involving the same trap states. At the single-particle level, reversible trapping induces exponential delayed PL and trap PL, with lifetimes ranging from 40 to 1300 ns. In contrast with exciton PL, single-trap PL is broad and shows spectral diffusion and strictly single-photon emission. Our results highlight the large inhomogeneity of trap states, even at the single-particle level.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8155320 | PMC |
| http://dx.doi.org/10.1021/acsnano.1c00481 | DOI Listing |
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