In this paper, we propose the design optimization of underlapped SiGe-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings () were analyzed by varying the Ge mole fraction of the SiGe source using a commercial device simulator. In particular, a SiGe-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 10, and of 27.4 mV/dec.
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| http://dx.doi.org/10.1166/jnn.2021.19401 | DOI Listing |
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