The referenced article [Appl. Opt.59, 11112 (2020)APOPAI0003-693510.1364/AO.412267] has been retracted by the author.
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http://dx.doi.org/10.1364/AO.423154 | DOI Listing |
Nanoscale
December 2024
Fujian Engineering Research Center for Solid-State Lighting, Department of Electronic Science, School of Electronic Science and Engineering, Xiamen University, Xiamen, 361102 Fujian, China.
Quantum dot (QD) materials and their patterning technologies play a pivotal role in the full colorization of next-generation Micro-LED display technology. This article reviews the latest development in QD materials, including II-VI group, III-V group, and perovskite QDs, along with the state of the art in optimizing QD performance through techniques such as ligand engineering, surface coating, and core-shell structure construction. Additionally, it comprehensively covers the progress in QD patterning methods, such as inkjet printing, photolithography, electrophoretic deposition, transfer printing, microfluidics, and micropore filling method, and emphasizes their crucial role in achieving high precision, density, and uniformity in QD deposition.
View Article and Find Full Text PDFIn this study, we explored the size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs grown on Si substrates. We successfully demonstrated the fabrication of 4-inch wafer-scale InGaN/GaN micro-LEDs, showcasing the feasibility of large-scale production. Additionally, we presented the binary pixel display with 6 µm pitch, achieving a resolution of 4232 PPI.
View Article and Find Full Text PDFWhat we believe to be a novel fabrication process for monolithic full-color (RGB) micro-LED (µLED) display technology, featuring three-dimensional (3D) and quantum dot (QD)-based color conversion layer, has been proposed. This method offers advantages such as a wide color gamut, high pixel density, high yield, and low cost. A 16 × 16 passive matrix (PM) RGB µLED array, with a pitch size of 80 µm and a pixel density of 328 pixels per inch (PPI), has been successfully realized using flip-chip bonding technology.
View Article and Find Full Text PDFNano Lett
October 2024
Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States.
Adv Mater
November 2024
Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China.
Monolithic integration of color-conversion materials onto blue-backlight micro-light-emitting-diodes (micro-LEDs) has emerged as a promising strategy for achieving full-color microdisplay devices. However, this approach still encounters challenges such as the blue-backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.
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