AI Article Synopsis
- The paper discusses advancements in silicon Mach-Zehnder modulators by incorporating germanium to create a graded Si-Ge core, which enhances performance significantly.
- Key factors such as substrate temperature, implantation energy, and pre-amorphization are evaluated for their effects on germanium composition and stress within the material.
- The SiGe modulator shows superior performance metrics, achieving 62 Gbps over 2 km of fiber with lower energy consumption and improved bandwidth compared to traditional silicon modulators.
Article Abstract
In this paper, the performance of a silicon (Si) Mach-Zehnder modulator (MZM) is enhanced by implanting germanium (Ge) on Si, forming a graded Si-Ge (SiGe) core. A process simulation study is done, and the effect of substrate temperature, implantation energy, and pre-amorphization on the Ge composition and developed in-plane stress is observed. The dependence of active dopant concentration and defect-cluster formation on the annealing conditions is discussed. A comparison of the process simulated SiGe phase shifter with a Si phase shifter shows 2.27× higher phase shift at -5 for 1550 nm wavelength of operation. A dual-arm drive with quadrature operation is investigated for both SiGe and Si MZMs. A traveling-wave electrode is used to enhance the modulation bandwidth. The SiGe MZM achieves better performance in terms of modulation bandwidth, modulation speed, fiber transmission length, energy per bit, and dispersion tolerance compared to the Si MZM. The dual-arm driven SiGe MZM can achieve 62 Gbps error-free 2 km fiber transmission with energy per bit of 1.92 pJ/bit and 3 dB bandwidth of 62.8 GHz at -2.5 bias using 3 on-off keying modulation.
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| http://dx.doi.org/10.1364/AO.416785 | DOI Listing |
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