AI Article Synopsis
- The text presents a new compact model based on surface potential for p-GaN gate HEMTs that effectively solves the Poisson equation.
- It accounts for all charge types in the GaN channel, including unintended doping from Mg out-diffusion.
- The model generates accurate I-V equations using physical parameters and is implemented in Verilog-A for practical use.
Article Abstract
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I-V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918229 | PMC |
| http://dx.doi.org/10.3390/mi12020199 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer.
Micromachines (Basel)
September 2024
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming the degradation of other characteristics. The device operation mechanism and characteristics are investigated by TCAD simulation. The results show that the peak electric field and impact ionization at the gate edges are reduced in the PN-HEMT due to the introduced P-GaN buried layer in the buffer layer.
View Article and Find Full Text PDFImprovement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
Micromachines (Basel)
April 2024
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum drain current, reduce gate leakage, and achieve lower on-resistance (R) performance. A comparison was made between the conventional device without the composited barrier and the device with the composited barrier structure.
View Article and Find Full Text PDFHighly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.
Micromachines (Basel)
January 2024
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 10.
View Article and Find Full Text PDFReview on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
Micromachines (Basel)
December 2023
Key Laboratory for Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance. PGaN gate HEMTs are promising candidates for high-voltage, high-power applications due to the normally off operation and robust gate reliability. However, the threshold and gate-breakdown voltages are relatively low compared with Si-based and SiC-based power MOSFETs.
View Article and Find Full Text PDFA Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance -GaN Gate HEMTs Fabrication.
Nanomaterials (Basel)
August 2023
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the -GaN etching induced damage region for high performance -GaN gate HEMTs fabrication. This process is composed of a self-limited surface modification step with O plasma, following by an oxide removal step with BCl plasma. With PESR process, the AlGaN surface morphology after -GaN etching was comparable to the as-epitaxial level by AFM characterization, and the AlGaN lattice crystallization was also recovered which was measured in a confocal Raman system.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!