AI Article Synopsis
- A new formula for the Hall coefficient offers a unique approach to understand nodal line and Weyl semimetals, as well as graphene and spin-orbit split semiconductor bands.
- The calculation simplifies to the ratio of two equilibrium susceptibilities, showing that the impact of weak disorder is minimal.
- The study identifies key factors such as band degeneracies, Fermi surface topology, and interband currents that cause deviations from traditional Drude theory, and suggests experiments to measure these effects.
Article Abstract
A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 066601 (2018)PRLTAO0031-900710.1103/PhysRevLett.121.066601] is applied to nodal line and Weyl semimetals (including graphene) and to spin-orbit split semiconductor bands in two and three dimensions. The calculation reduces to a ratio of two equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density are associated with band degeneracies, Fermi surface topology, and interband currents. Experiments which can measure these deviations are proposed.
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