AI Article Synopsis
Article Abstract
Quantum annealing (QA) and the quantum approximate optimization algorithm (QAOA) are two special cases of the following control problem: apply a combination of two Hamiltonians to minimize the energy of a quantum state. Which is more effective has remained unclear. Here we analytically apply the framework of optimal control theory to show that generically, given a fixed amount of time, the optimal procedure has the pulsed (or "bang-bang") structure of QAOA at the beginning and end but can have a smooth annealing structure in between. This is in contrast to previous works which have suggested that bang-bang (i.e., QAOA) protocols are ideal. To support this theoretical work, we carry out simulations of various transverse field Ising models, demonstrating that bang-anneal-bang protocols are more common. The general features identified here provide guideposts for the nascent experimental implementations of quantum optimization algorithms.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/PhysRevLett.126.070505 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Low-Cost Preparation of Wafer-Scale Au(111) Single Crystals for the Epitaxy of Two-Dimensional Layered Materials.
ACS Nano
January 2025
School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
Single-crystal Au(111), renowned for its chemically inert surface, long-range "herringbone" reconstruction, and high electrical conductivity, has long served as an exemplary template in diverse fields, , crystal epitaxy, electronics, and electrocatalysis. However, commercial Au(111) products are high-priced and limited to centimeter sizes, largely restricting their broad applications. Herein, a low-cost, high-reproducible method is developed to produce 4 in.
View Article and Find Full Text PDFIn Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells.
Nanomaterials (Basel)
January 2025
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
In situ X-ray reciprocal space mapping was performed during the interval heating and cooling of InGaN/GaN quantum wells (QWs) grown via metal-organic vapor phase epitaxy (MOVPE). Our detailed in situ X-ray analysis enabled us to track changes in the peak intensities and radial and angular broadenings of the reflection. By simulating the radial diffraction profiles recorded during the thermal cycle treatment, we demonstrate the presence of indium concentration distributions (ICDs) in the different QWs of the heterostructure (1.
View Article and Find Full Text PDFInfrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.
Nanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
View Article and Find Full Text PDFTuning electronic structure and carrier transport properties through crystal orientation control in two-dimensional Dion-Jacobson phase perovskites.
Nano Converg
January 2025
Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea.
Two-dimensional halide perovskites are attracting attention due to their structural diversity, improved stability, and enhanced quantum efficiency compared to their three-dimensional counterparts. In particular, Dion-Jacobson (DJ) phase perovskites exhibit superior structural stability compared to Ruddlesden-Popper phase perovskites. The inherent quantum well structure of layered perovskites leads to highly anisotropic charge transport and optical properties.
View Article and Find Full Text PDFInfrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.
Nanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!