AI Article Synopsis
- A low-temperature preparation method for titanium dioxide (TiO) used as an electron transport layer (ETL) is crucial for creating flexible solar devices, but it often leads to interface defects that hinder performance.
- The study introduces a simple low-temperature process to co-dope TiO with tantalum (Ta) and niobium (Nb), which enhances the material's properties by increasing its conduction band level and reducing trap-state defects.
- As a result, a significant boost in power conversion efficiency to 19.44% has been achieved in perovskite solar cells (PSCs) using this modified TiO ETL, compared to 17.60% with standard TiO.
Article Abstract
A low-temperature preparation process is significantly important for scalable and flexible devices. However, the serious interface defects between the normally used titanium dioxide (TiO) electron transport layer (ETL) obtained via a low-temperature method and perovskite suppress the further improvement of perovskite solar cells (PSCs). Here, we develop a facile low-temperature chemical bath method to prepare a TiOETL with tantalum (Ta) and niobium (Nb) co-doping. Systematic investigations indicate that Ta/Nb co-doping could increase the conduction band level of TiOand could decrease the trap-state density, boosting electron injection efficiency and reducing the charge recombination between the perovskite/ETL interface. A superior power conversion efficiency of 19.44% can be achieved by a planar PSC with a Ta/Nb co-doped TiOETL, which is much higher than that of pristine TiO(17.60%). Our achievements in this work provide new insights on low-temperature fabrication of low-cost and highly efficient PSCs.
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