Objective: To clarify whether indium in serum (In-S) is an appropriate parameter for assessing accumulated indium concentration in the lungs (In-L).
Methods: During our approximately 15-year Japanese cohort follow-up, five male indium-tin oxide (ITO) or/and indium trioxide-exposed workers underwent lung surgical procedures to treat lung diseases or to confirm a diagnosis of lung impairments. We measured In-L of these Cases 1-5 and were able to assess the relationship between In-L and the most recent In-S. Another 1 Japanese case (Case 6) exposed to indium trioxide and indium hydroxide was referred from an article.
Results: Cases 1 and 3 had lung cancer, Case 2 suffered from recurrent pneumothorax, and Case 4 had interstitial pneumonia with mild emphysema. Case 5 had severe emphysema with pulmonary hypertension and underwent bilateral lung transplantation. In Cases 1-5, In-L and In-S ranged from 3.4 to 161.2 µg/g wet weight and 0.7 to 60.4 ng/mL, respectively, and In-L/In-S ratios ranged from 2484 to 4857. The slope of the single regression equation with zero intercept was 2767 and the correlation coefficient was 0.995. In contrast, Case 6 was extraordinarily outlying, but the reason is unclear.
Conclusions: In-S is an excellent predictor for assessing indium load in the lungs in ITO or/and indium trioxide-exposed workers. However, number of cases was only five and not enough to authorize definite conclusion. It is desirable to add more cases to confirm our conclusion.
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http://dx.doi.org/10.1002/1348-9585.12207 | DOI Listing |
Inorg Chem
January 2025
School of Materials Science and Engineering, Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications, Changzhou University, Changzhou 213164, PR China.
This study presents the synthesis and characterization of CsNaBiCl nanocrystals (NCs) doped with varying concentrations of In to improve their luminescent properties. Utilizing a colloidal solution method, we systematically varied the In concentration to identify the optimal alloying level for enhancing the photoluminescence (PL) properties of the CsNaBiCl NCs. Structural analysis confirmed that the In-alloyed NCs maintained high crystallinity and a uniform cubic shape.
View Article and Find Full Text PDFPhys Eng Sci Med
January 2025
Radiation Application Research School, Nuclear Science and Technology Research Institute (NSTRI), Tehran, 14155-1339, Iran.
Gastrin-releasing peptide receptors (GRPRs) overexpressed in many cancers are known as promising biomarkers to target tumors such as prostate, breast, and lung cancers. As the early diagnosis of the cancers can serve for better treatment of the patients, [In]In-DOTA-Pip-D-Phe-Gln-Trp-Ala-Val-Gly-His-Sta-Leu-NH2 ([In]In-RM2) was prepared using an in-house developed Sn/In generator. 0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong 518107, P.R. China.
Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring TCOs. However, no promising industrial solution has been obtained yet.
View Article and Find Full Text PDFNat Commun
January 2025
Key Laboratory of Photochemistry, Institute of Chemistry Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Beijing, PR China.
To enable open environment application of artificial photosynthesis, the direct utilization of environmental CO via an oxygen-tolerant reductive procedure is necessary. Herein, we introduce an in situ growth strategy for fabricating two-dimensional heterojunctions between indium porphyrin metal-organic framework (In-MOF) and single-layer graphene oxide (GO). Upon illumination, the In-MOF/GO heterostructure facilitates a tandem CO capture and photocatalytic reduction on its hydroxylated In-node, prioritizing the reduction of dilute CO even in the presence of air-level O.
View Article and Find Full Text PDFSci Rep
December 2024
School of Electrical Engineering, Kookmin University, Seoul, 02707, Republic of Korea.
This study optimizes V and ΔV in amorphous indium-gallium-zinc-oxide (a-IGZO) field-effect transistors (FETs) by examining the influence of both channel length (L) and Ga composition. It was observed that as the ratio of In: Ga: Zn changed from 1:1:1 to 0.307:0.
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