AI Article Synopsis
- Rashba spin-orbit coupling allows for electric control of spin states, which could greatly improve computing beyond what charge-based methods offer.
- Researchers have identified a new method to find optimal systems with strong Rashba effects using the difference in Born effective charge at atomic interfaces as a predictive descriptor.
- The study highlights that typical measures of the Rashba effect strength may not be accurate, pointing to materials like MoTe|TlO and MoTe|PtS as promising candidates for making effective spin transistors that operate at room temperature.
Article Abstract
Rashba spin-orbit coupling enables electric control of spin states, promising enormous advances from conventional charge-based computing. Until now, a general scheme or a descriptor to find an optimal system with isolated spin states with large tunable splitting is still lacking. Here, based on first-principles calculations, we explore the microscopic physicochemical mechanism responsible for the Rashba effect in 2D van der Waals heterobilayers. We find that the difference in the Born effective charge of atoms at the interface can be used as a -layer descriptor to predict with large Rashba splitting, thus reducing the scaling factor in materials search. Moreover, we discover that for most 2D materials, the routinely used Rashba parameter α is not a good gauge of the effect's strength. From our general scheme, MoTe|TlO and MoTe|PtS, with spin splitting above 120 meV, Rashba energy = 94 meV, and wavenumber difference 2 = 0.36 Å ("effective" α > 1 eVÅ), emerge as the best candidates for spin transistors at room temperature.
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| http://dx.doi.org/10.1021/jacs.0c12809 | DOI Listing |
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