characterization of conductive filaments during resistive switching in Mott VO.

Vanadium dioxide (VO) has attracted much attention owing to its metal-insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO/Ge vertical devices to study the electroforming process. We have observed the formation of VO conductive filaments with a pronounced metal-insulator transition and that vacancy diffusion can erase the filament, allowing for the system to "forget." Thus, both volatile and nonvolatile switching can be achieved in VO, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing.