We disclose the intrinsic semiconducting properties of one of the largest mixed-valent uranium clusters, [H O ][U (U O ) (μ -O) (PhCOO) (Py(CH O) ) (DMF) ] (Ph=phenyl, Py=pyridyl, DMF=N,N-dimethylformamide) (1). Single-crystal X-ray crystallography demonstrates that U center is stabilized within a tetraoxo core surrounded by eight uranyl(VI) pentagonal bipyramidal centers. The oxidation states of uranium are substantiated by spectroscopic data and magnetic susceptibility measurement. Electronic spectroscopy and theory corroborate that U species serve as electron donors and thus facilitate 1 being a n-type semiconductor. With the largest effective atomic number among all reported radiation-detection semiconductor materials, charge transport properties and photoconductivity were investigated under X-ray excitation for 1: a large on-off ratio of 500 and considerable charge mobility lifetime product of 2.3×10 cm V , as well as a high detection sensitivity of 23.4 μC Gy cm .
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http://dx.doi.org/10.1002/anie.202017298 | DOI Listing |
Phys Chem Chem Phys
January 2025
College of Sciences, Northeastern University, Shenyang, 110819, China.
In this work, using first-principles calculations, we predict a promising class of two-dimensional ferromagnetic semiconductors, namely Janus PrXY (X ≠ Y = Cl, Br, I) monolayers. Through first-principles calculations, we found that PrXY monolayers have excellent dynamic and thermal stability, and their band structures, influenced by magnetic exchange and spin-orbital coupling, exhibit significant valley polarization. Between and - valleys, the Berry curvature values are opposite to each other, resulting in the anomalous valley Hall effect.
View Article and Find Full Text PDFAcc Chem Res
January 2025
Department of Chemistry, University of California, Berkeley, California 94720, United States.
ConspectusThe electronic properties of atomically thin van der Waals (vdW) materials can be precisely manipulated by vertically stacking them with a controlled offset (for example, a rotational offset─i.e., twist─between the layers, or a small difference in lattice constant) to generate moiré superlattices.
View Article and Find Full Text PDFAdv Mater
January 2025
The Institute of Flexible Electronics (IFE Future Technologies), Xiamen University, 422 Siming South Road, Xiamen, 361005, China.
Complex internal stresses that appear in flexible thin-film electronic devices under long-term deformation operation are associated with incompatible mechanical properties of the multiple layers, which potentially cause intralayer fracture and separation. These defects may result in device instability, performance loss, and failure. Herein, a thermoplastic functional strategy is proposed for manufacturing high-performance stretchable semiconducting polymers with excellent strain-tolerance capacities for flexible electronic devices.
View Article and Find Full Text PDFPolymers (Basel)
January 2025
Department of Materials Science and Engineering, Gachon University, Seongnam 13120, Republic of Korea.
Single-walled carbon nanotubes (SWNTs) exhibit distinct electronic properties, categorized as metallic or semiconducting, determined by their chirality. The precise and selective separation of these electronic types is pivotal for advancing nanotechnology applications. While conventional gel chromatography has been widely employed for large-scale separations, its limitations in addressing microscale dynamics and electronic-type differentiation have persisted.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Department of Energy and Refrigerating Air-Conditioning Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan.
This study employs first-principles calculations to investigate the geometric and electronic properties of hydrogenated silicon nanotubes (SiNTs). SiNTs, particularly in their gear-like configuration, demonstrate unique semiconducting behavior; however, their relatively small intrinsic band gaps limit their applicability in fields requiring moderate band gaps. Significant changes in electronic properties are observed by hydrogenating SiNTs at various levels of adsorption-either full or partial-and different surface configurations (exterior, interior, or dual-sided).
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