Intrinsic Semiconducting Behavior in a Large Mixed-Valent Uranium(V/VI) Cluster.

Angew Chem Int Ed Engl

State Key Laboratory of Radiation Medicine and Protection, School for Radiological and interdisciplinary Sciences (RAD-X) and Collaborative Innovation Center of Radiation Medicine of, Jiangsu Higher Education Institutions, Soochow University, Suzhou, 215123, China.

Published: April 2021

We disclose the intrinsic semiconducting properties of one of the largest mixed-valent uranium clusters, [H O ][U (U O ) (μ -O) (PhCOO) (Py(CH O) ) (DMF) ] (Ph=phenyl, Py=pyridyl, DMF=N,N-dimethylformamide) (1). Single-crystal X-ray crystallography demonstrates that U center is stabilized within a tetraoxo core surrounded by eight uranyl(VI) pentagonal bipyramidal centers. The oxidation states of uranium are substantiated by spectroscopic data and magnetic susceptibility measurement. Electronic spectroscopy and theory corroborate that U species serve as electron donors and thus facilitate 1 being a n-type semiconductor. With the largest effective atomic number among all reported radiation-detection semiconductor materials, charge transport properties and photoconductivity were investigated under X-ray excitation for 1: a large on-off ratio of 500 and considerable charge mobility lifetime product of 2.3×10  cm  V , as well as a high detection sensitivity of 23.4 μC Gy  cm .

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http://dx.doi.org/10.1002/anie.202017298DOI Listing

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