Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 10 was obtained at V = - 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 10 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 10 W, and the noise equivalent power (NEP) of 1.22 × 10 WHz. The strong light-matter interaction stipulates that the GeSe/MoSe diode may open new realms in multi-functional electronics and optoelectronics applications.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7878902 | PMC |
| http://dx.doi.org/10.1038/s41598-021-83187-z | DOI Listing |
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