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Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation. | LitMetric

AI Article Synopsis

  • - Point defects in silicon carbide (SiC) are promising for quantum computing and sensing due to their long spin coherence times and effective optical properties, making them compatible with existing technologies.
  • - The research demonstrates the creation of silicon vacancy defect arrays in 4H-SiC using a focused ion beam, allowing for highly accurate positioning of these defects at the nanoscale.
  • - Characterization techniques, including high-resolution microscopy and optically-detected magnetic resonance, confirm the successful generation and controllable density of these defects, enhancing their potential for scalable quantum applications.

Article Abstract

Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place these defects at the optimal location in a host material with nano-scale accuracy is desirable for integration of these quantum systems with traditional electronic and photonic structures. Here, we demonstrate the precise spatial patterning of arrays of silicon vacancy ([Formula: see text]) emitters in an epitaxial 4H-SiC (0001) layer through mask-less focused ion beam implantation of Li. We characterize these arrays with high-resolution scanning confocal fluorescence microscopy on the Si-face, observing sharp emission lines primarily coming from the [Formula: see text] zero-phonon line (ZPL). The implantation dose is varied over 3 orders of magnitude, leading to [Formula: see text] densities from a few per implantation spot to thousands per spot, with a linear dependence between ZPL emission and implantation dose. Optically-detected magnetic resonance (ODMR) is also performed, confirming the presence of V2 [Formula: see text]. Our investigation reveals scalable and reproducible defect generation.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7878855PMC
http://dx.doi.org/10.1038/s41598-021-82832-xDOI Listing

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