Holes in clear lenses demonstrate a pinhole effect.

Arch Ophthalmol

Ophthalmology Unit, Beth Israel Hospital, Boston, MA 02215.

Published: April 1988

This study describes a new variant of the pinhole principle. Holes drilled in clear plastic lenses held in combination with a blurring lens can overcome the blurring effect much as a traditional pinhole. Specifically, this study shows how holes of different diameter placed in lenses of different spherical power can improve visual acuity that has been degraded by a series of blurring spherical lenses. In general, the hole in the clear lens improves visual acuity for progressively stronger blurring lenses.

Download full-text PDF

Source
http://dx.doi.org/10.1001/archopht.1988.01060130557035DOI Listing

Publication Analysis

Top Keywords

pinhole study
8
visual acuity
8
lenses
5
holes clear
4
clear lenses
4
lenses demonstrate
4
demonstrate pinhole
4
study describes
4
describes variant
4
variant pinhole
4

Similar Publications

Ultrathin electrolytic copper foils with a thickness of 6 μm were prepared by a test machine using copper sulfate electrolyte with gelatin, hydroxyethyl cellulose (HEC), and sulfonic acid-containing organics as additives. The effects of four sulfonic acid-containing organic additives, sodium 3-mercaptopropanesulfonate (MPS), bis-(sodium sulfopropyl)-disulfide (SPS), sodium 3-[[(dimethylamino)thioxomethyl]thio]propanesulfonate (DPS), and sodium 3-((4,5-dihydrothiazol-2-yl)thio)propane-1-sulfonate (TPS), on the physical property of copper foils were investigated. The results show that all these additives can effectively improve the gloss and tensile strength of electrolytic copper foil, and the texture coefficients of Cu(111) selectivity increase.

View Article and Find Full Text PDF

Introduction And Importance: The branchial or pharyngeal apparatus, crucial in embryological development, consists of clefts, arches, pouches, and membranes. Anomalies arising from this apparatus particularly involving the second branchial arch, are rare. Among these anomalies, complete second branchial cleft fistulas, with both external and internal openings, are exceptionally uncommon.

View Article and Find Full Text PDF

The Pinhole Surgical Technique (PST) was first described in the International Journal of Periodontics and Restorative Dentistry (IJPRD) in October 2012, in a case series involving 43 patients with 121 recession defects, including follow-up data for 37 patients with 85 Miller Class I-II recession defects over an average period of 20.0 ± 6.7 months.

View Article and Find Full Text PDF

Impact on Distance and Near Contrast Sensitivity of Multifocal Contact Lenses: A Systematic Review.

Eye Contact Lens

November 2024

Department of Optics, Pharmacology and Anatomy (K.J.M.-G., D.F., D.P.P.), University of Alicante, Alicante, Spain; and Advanced Clinic Optometry Unit (D.P.P.), Department of Ophthalmology, Medimar International Hospital, Alicante, Spain.

Purpose: To investigate the impact on distance and near contrast sensitivity (CS) after fitting multifocal contact lenses (MFCLs) for presbyopia correction according to the scientific evidence already published.

Methods: Three bibliographic search was conducted on PubMed, Web of Sciences, and Scopus. Inclusion criteria were articles written in English evaluating distance and/or near CS in presbyopic patients using MFCLs, controlled clinical trials, and articles published from 2000 to 2024.

View Article and Find Full Text PDF

Post-Treatment of Monolayer MoS Field-Effect Transistors with HO Vapor: Alleviation of Remote Channel Doping.

ACS Appl Mater Interfaces

January 2025

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Atomic layer deposition (ALD) of high-k dielectric films on MoS channels can lead to inadvertent remote electron doping of channels owing to nonequilibrium ALD conditions, such as the low temperatures and short purge times required for pinhole-free coating, as well as the weak physical adsorption of ALD precursors on MoS. In this study, we propose the application of a simple and effective HO vapor post-treatment (HO PT) at 100 °C immediately after complete integration of bottom- and top-gate monolayer MoS field-effect transistors (FETs), to address the inadvertent channel doping effect. When HO PT was applied to bottom-gate monolayer MoS FETs with an ALD-AlO passivation layer, the mitigation of channel doping was confirmed through electrical and optical measurements.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!