AI Article Synopsis
- - This study demonstrates the creation of fully epitaxial ferroelectric Hf Zr O (HZO) thin films using conducting pyrochlore oxide electrodes, which serve as structural and chemical templates.
- - The pyrochlores, like Pb Ir O (PIO) and Bi Ru O (BRO), have high metallic conductivity and are well-suited for supporting layers of HZO due to their lattice compatibility with yttria-stabilized zirconia substrates.
- - Through methods like X-ray diffraction and scanning transmission electron microscopy, the research shows that the orientation of the HZO films is aligned with the substrate, revealing phase changes based on film thickness that are influenced by epitaxial strain and surface energy.
Article Abstract
The synthesis of fully epitaxial ferroelectric Hf Zr O (HZO) thin films through the use of a conducting pyrochlore oxide electrode that acts as a structural and chemical template is reported. Such pyrochlores, exemplified by Pb Ir O (PIO) and Bi Ru O (BRO), exhibit metallic conductivity with room-temperature resistivity of <1 mΩ cm and are closely lattice matched to yttria-stabilized zirconia substrates as well as the HZO layers grown on top of them. Evidence for epitaxy and domain formation is established with X-ray diffraction and scanning transmission electron microscopy, which show that the c-axis of the HZO film is normal to the substrate surface. The emergence of the non-polar-monoclinic phase from the polar-orthorhombic phase is observed when the HZO film thickness is ≥≈30 nm. Thermodynamic analyses reveal the role of epitaxial strain and surface energy in stabilizing the polar phase as well as its coexistence with the non-polar-monoclinic phase as a function of film thickness.
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| http://dx.doi.org/10.1002/adma.202006089 | DOI Listing |
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