The light-matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications, which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit, it is of great significance to study the light-matter interaction below the material bandgap. Here, we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap, we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e., real carrier states in the short-wavelength region of ~<1 µm, and exciton states in the long wavelength region of ~>1 µm). Our results elucidate the fundamental understanding regarding the optical properties, excited carrier states, and carrier dynamics in the technologically important near-infrared region, which potentially leads to various photonic and optoelectronic applications (e.g., excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.
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http://dx.doi.org/10.1038/s41377-021-00462-4 | DOI Listing |
Adv Sci (Weinh)
January 2025
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Controlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic and optoelectronic devices. Here, ferroelectric semiconductor-based field-effect transistors (FeSFETs) are fabricated, where the channel is a ferroelectric semiconductor (e.g.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
Department of General Surgery, The First Affiliated Hospital of University of Science and Technology of China, Division of Life Sciences and Medicine, University of Science and Technology of China, Hefei, Anhui, 230036, P. R. China.
Black phosphorus (BP) has demonstrated potential as a drug carrier and photothermal agent in cancer therapy; however, its intrinsic functions in cancer treatment remain underexplored. This study investigates the immunomodulatory effects of polyethylene glycol-functionalized BP (BP-PEG) nanosheets in breast cancer models. Using immunocompetent mouse models-including 4T1 orthotopic BALB/c mice and MMTV-PyMT transgenic mice, it is found that BP-PEG significantly inhibits tumor growth and metastasis without directly inducing cytotoxicity in tumor cells.
View Article and Find Full Text PDFNanophotonics
January 2025
Departamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Madrid, 28040 Spain.
Polar biaxial crystals with extreme anisotropy hold promise for the spatial control and the manipulation of polaritons, as they can undergo topological transitions. However, taking advantage of these unique properties for nanophotonic devices requires to find mechanisms to modulate dynamically the material response. Here, we present a study on the propagation of surface phonon polaritons (SPhPs) in a photonic architecture based on a thin layer of α-MoO deposited on a semiconducting 4H-SiC substrate, whose carrier density can be tuned through photoinduction.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States.
The coupling between excitons in semiconductors or molecules and metal nanoparticles has been well-studied, primarily for nanoparticles in their ground electronic state. However, less attention has been given to exciton-nanoparticle interactions when the nanoparticle generates surface plasmons upon incident excitation. In this study, we explore the coupling and energy transfer dynamics between an exciton and the surface plasmon of a metal nanoparticle, forming a "plexciton".
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Electrical Engineering and Computer Science (EECS), Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
A transistor design employing all vertically stacked components has attracted considerable attention due to the simplicity of the fabrication process and the high conductivity easily realized by achieving nanolevel short channel lengths with two-dimensional current paths. However, fundamental issues, specifically the blocking of the gate electrical field to the semiconductive channel layer and high leakage current at the "off" state, have impeded this configuration in becoming a major transistor design. To address these issues, it has been proposed to introduce a blocking layer (BL) with embedded hole structures and source electrode with embedded hole structures, enhancing gate field penetration and carrier modulation.
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