Ultrafast transient sub-bandgap absorption of monolayer MoS.

Light Sci Appl

Department of Electronics and Nanoengineering, Aalto University, 02150, Espoo, Finland.

Published: January 2021

AI Article Synopsis

  • The study focuses on how light interacts with materials, specifically looking at monolayer molybdenum disulfide, and how this interaction is important for photonic and optoelectronic technologies.
  • Researchers explored light absorption in the sub-bandgap region (0.86 µm to 1.4 µm), finding an enhancement of absorbance up to 4.2%, which is significant compared to traditional bandgap absorption due to excited carrier states.
  • The results provide insights into the optical properties and carrier dynamics of these materials, suggesting potential applications for advanced photonic devices like photodetectors and modulators that operate beyond typical bandgap limits.

Article Abstract

The light-matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications, which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit, it is of great significance to study the light-matter interaction below the material bandgap. Here, we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap, we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e., real carrier states in the short-wavelength region of ~<1 µm, and exciton states in the long wavelength region of ~>1 µm). Our results elucidate the fundamental understanding regarding the optical properties, excited carrier states, and carrier dynamics in the technologically important near-infrared region, which potentially leads to various photonic and optoelectronic applications (e.g., excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7846580PMC
http://dx.doi.org/10.1038/s41377-021-00462-4DOI Listing

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