Topological order can be found in a wide range of physical systems, from crystalline solids, photonic meta-materials and even atmospheric waves to optomechanic, acoustic and atomic systems. Topological systems are a robust foundation for creating quantized channels for transporting electrical current, light, and atmospheric disturbances. These topological effects are quantified in terms of integer-valued 'invariants', such as the Chern number, applicable to the quantum Hall effect, or the [Formula: see text] invariant suitable for topological insulators. Here, we report the engineering of Rashba spin-orbit coupling for a cold atomic gas giving non-trivial topology, without the underlying crystalline structure that conventionally yields integer Chern numbers. We validated our procedure by spectroscopically measuring both branches of the Rashba dispersion relation which touch at a single Dirac point. We then measured the quantum geometry underlying the dispersion relation using matter-wave interferometry to implement a form of quantum state tomography, giving a Berry's phase with magnitude π. This implies that opening a gap at the Dirac point would give two dispersions (bands) each with half-integer Chern number, potentially implying new forms of topological transport.
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http://dx.doi.org/10.1038/s41467-020-20762-4 | DOI Listing |
Materials (Basel)
January 2025
Department Physics and Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA.
In this paper, we review our work on the manipulation of magnetization in ferromagnetic semiconductors (FMSs) using electric-current-induced spin-orbit torque (SOT). Our review focuses on FMS layers from the (Ga,Mn)As zinc-blende family grown by molecular beam epitaxy. We describe the processes used to obtain spin polarization of the current that is required to achieve SOT, and we briefly discuss methods of specimen preparation and of measuring the state of magnetization.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea.
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, a new approach is demonstrated for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide FeGeTe/SrTiO heterostructure.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
View Article and Find Full Text PDFSci Rep
December 2024
Faculty of Mathematics and Computer Science, University of Warmia and Mazury in Olsztyn, ul. Słoneczna 54, 10-710, Olsztyn, Poland.
A theoretical investigation of spin-orbit coupling effect on magnetotransport of a monolayer graphene system having the geometry of Aharonov-Bohm interferometer is presented. The spin-orbit interaction is considered in the form of Rashba spin-orbit (RSO) coupling. The problem is studied within atomistic tight-binding approximation in combination with non-equilibrium Green's functions formalism.
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