We report facile growth methods for high-quality monolayer and multilayer MoS films using MoOCl as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl. Consequently, the thickness of MoS can be controlled by our method as the application demands.
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Article Synopsis
- - 2D materials, particularly their monolayers, have unique properties that can be modified through strain engineering; however, challenges arise due to weak interactions between the materials and their substrates.
- - This study explores the use of metal films to apply strain, enhancing the connection and strain transfer in 2D materials, achieving high modulation rates for monolayer MoS when using photoluminescence (PL) spectra.
- - The method developed is versatile and can be applied to other 2D materials like WS and WSe, offering a novel way to control strain in these materials effectively.
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