Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications.

Micromachines (Basel)

IEMN (Institute of Electronics, Microelectronics and Nanotechnology), CNRS (Centre National de Recherche Scientifique), Avenue Poincaré, 59650 Villeneuve d'Ascq, France.

Published: January 2021

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era [...].

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7830951PMC
http://dx.doi.org/10.3390/mi12010083DOI Listing

Publication Analysis

Top Keywords

wide bandgap
8
editorial special
4
special issue
4
issue wide
4
bandgap based
4
based devices
4
devices design
4
design fabrication
4
fabrication applications
4
applications emerging
4

Similar Publications

Ultra-wide range control of topological acoustic waveguidesa).

J Acoust Soc Am

January 2025

Jianglu Mechanical Electrical Group Company Limited, Xiangtan 411105, China.

Topological acoustic waveguides have a potential for applications in the precise transmission of sound. Currently, there is more attention to multi-band in this field. However, achieving tunability of the operating band is also of great significance.

View Article and Find Full Text PDF

Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening.

Light Sci Appl

January 2025

Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.

Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However, the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performance devices at lower voltage ranges. Here, we introduce "giant" fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs.

View Article and Find Full Text PDF

Acidic Engineering on Buried Interface toward Efficient Inorganic CsPbI Perovskite Light-Emitting Diodes.

Nano Lett

January 2025

School of Environmental Science and Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China.

Inorganic CsPbI perovskite has emerged as a promising emitter for deep-red light-emitting diodes (LEDs) due to its intrinsic thermal stability and suitable bandgap. However, uncontrollable CsPbI crystallization induced by an alkaline zinc oxide (ZnO) substrate in bulk film-based LEDs leads to insufficient external quantum efficiencies (EQEs) at high brightness, leaving obstacles in commercialization progress. Herein, we demonstrate an effective acidic engineering strategy with wide applicability to modify the surface property of ZnO and regulate CsPbI crystallization.

View Article and Find Full Text PDF

Topological interface states (TISs), known for their distinctive capabilities in manipulating electromagnetic waves, have attracted significant interest. However, in conventional all-dielectric one-dimensional photonic crystal (1DPC) heterostructures, TISs strongly depend on incident angle, which limits their practical applications. Here, we realize an angle-independent TIS in 1DPC heterostructures containing hyperbolic metamaterials (HMMs) for transverse magnetic polarized waves.

View Article and Find Full Text PDF

Improvement of glucose detection using 10 nm AlO thin film on diamond solution-gate field-effect transistor.

Talanta

January 2025

Key Laboratory for Physical Electronics and Devices of the Ministry of Education & School of Science & Shaanxi Key Laboratory of Information Photonic Technique & Institute of Wide Bandgap Semiconductors, Xi'an Jiaotong University, Xi'an, 710049, China. Electronic address:

Glucose detection is crucial for diagnosis, prevention and treatment of diabetes mellitus. In this work, 10 nm AlO thin film was introduced on the channel of diamond solution-gate field-effect transistor (SGFET) to improve the performance of glucose detection. AFM results show the roughness of channel surface increased after AlO thin film deposition.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!