Silicon carbide (SiC)-based ceramic matrix composites (CMCs) are utilized for their refractory properties in the aerospace industry. The composition and structure of these materials are crucial to maintaining the strength, toughness, oxidation, and creep resistances that are desired of silicon carbide. This work analyzes the chemical composition of the matrix in batches of SiC/SiC (silicon carbide fiber-reinforced silicon carbide matrix) minicomposites that are processed by chemical vapor infiltration of the BN interphase and SiC matrix on single Hi-Nicalon Type S fiber tows using a range of processing parameters. The analysis was performed here to investigate the potential causes of variation in matrix tensile strength in the various batches of minicomposites. Six different morphologies present in the silicon carbide matrix were observed: smooth, nodular, rough nodular, bumpy, nucleated, and plate-like. It was found that high-matrix tensile strength minicomposite batches contained solely the smooth morphology, while low-matrix tensile strength minicomposite batches contained a variety of other morphologies. FIB/TEM was used to study the atomic and crystal character of each individual morphology. Smooth SiC is oriented by the (111) planes and is primarily SiC, while the other morphologies are randomly oriented and contain significant oxygen. These results match the tensile strength tests, which pointed to smooth SiC as the strongest matrix material.
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http://dx.doi.org/10.1021/acsomega.0c05442 | DOI Listing |
Polymers (Basel)
January 2025
Advanced Manufacturing Institute, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia.
Multifunctional polymer composites containing micro/nano hybrid reinforcements have attracted intensive attention in the field of materials science and engineering. This paper develops a multi-phase analytical model for investigating the effective electrical conductivity of micro-silicon carbide (SiC) whisker/nano-carbon black (CB) polymer composites. First, CB nanoparticles are dispersed within the non-conducting epoxy to achieve a conductive CB-filled nanocomposite and its electrical conductivity is predicted.
View Article and Find Full Text PDFSensors (Basel)
January 2025
School of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters' (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
CT-Lab UG (Haftungsbeschränkt), Nobelstr. 15, 70569 Stuttgart, Germany.
Silicon carbide and an aluminum alloy (SiC/AlSi12) composite are obtained during the pressurized casting process of the aluminum alloy into the SiC foam. The foam acts as a high-stiffness skeleton that strengthens the aluminum alloy matrix. The goal of the paper is to describe the behavior of the material, considering its internal structure.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China.
The short-circuit (SC) robustness of SiC MOSFETs is critical for high-power applications, yet 1.2 kV devices often struggle to meet the industry-standard SC withstand time (SCWT) under practical operating conditions. Despite growing interest in higher voltage classes, no prior study has systematically evaluated the SC performance of 1.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
Department of Biomechatronics Engineering, National Taiwan University, Taipei 106319, Taiwan.
Silicon carbide (SiC) has significant potential as a third-generation semiconductor material due to its exceptional thermal and electronic properties, yet its high hardness and brittleness make processing costly and complex. This study introduces ultraviolet laser ablation as a method for direct SiC material removal, investigating the effects of varying scanning speeds on surface composition, hardness, and ablation depth. The results indicate optimal processing speeds for the Si and C faces at 200 mm/s and 100 mm/s, respectively.
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