Multiple-quantum well (MQW) III-nitride diodes can both emit and detect light. In particular, a III-nitride diode can absorb shorter-wavelength photons generated from another III-nitride diode that shares an identical MQW structure because of the spectral overlap between the emission and detection spectra of the III-nitride diode, which establishes a wireless visible light communication system using two identical III-nitride diodes. Moreover, a wireless light communication system using a modulating retro-reflector (MRR) enables asymmetric optical links, which forms a two-way optical link using a single transmitter and receiver. Here, in association with an MRR, we propose, fabricate, and characterize asymmetric optical links using monolithic III-nitride diodes, where one III-nitride diode functions as a transmitter to emit light, an MRR reflects light with the encoded information, another monolithically integrated III-nitride diode serves as a receiver to absorb the reflected light to convert optical signals into electrical ones, and the encoded information is finally decoded. Advanced monolithic III-nitride asymmetric optical links can be developed toward Internet of Things (IoT) deployment based on such multifunction devices.
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III-nitride multi-quantum well (MQW) diodes can modulate the light emitted by another diode with the same MQW structure by varying the bias voltage owing to the spectral overlap between the electroluminescence spectrum and spectral responsivity curve of the MQW diodes. Here, we investigate bias-controlled modulation by monolithically integrating an optical transmitter, waveguide, electro-absorption modulator (EAM), and slot grating coupler on a silicon-based III-nitride platform using compatible fabrication processes. The modulated light is coupled into a fiber, which is direct to a photodiode for characterization.
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