The effective fifth-order susceptibility, ${\chi}_{\rm eff}^{(5)}$, of two-dimensional (2D) semiconducting layered transition metal dichalcogenide (LTMD) molybdenum disulfide (${\rm MoS}_2$) is reported here for the first time, to the best of our knowledge. Using the $ Z $-scan technique with a laser operating at 800 nm, 1 kHz, 100 fs, we investigated the nonlinear behavior of ${\rm MoS}_2$ suspended in acetonitrile (concentration, 70 µg/ml). The effective nonlinear refractive index ${{n}_{4,{eff}}} = - ({7.6 \pm 0.5}) \times {10^{- 26}}\; {{\rm cm}^4}/{{\rm W}^2}$, proportional to ${\rm Re}{\chi}_{\rm eff}^{(5)}$, was measured for monolayer ${\rm MoS}_2$ nanoflakes, prepared by a modified redox exfoliation method. We also determined the value of the nonlinear refractive index ${{n}_2} = + ({4.8 \pm 0.5}) \times {10^{- 16}}\;{{\rm cm}^2}/{\rm W}$, which is related to the material's effective third-order optical susceptibility real part, ${Re\chi}_{\rm eff}^{(3)}$. For comparison, we also investigated the nonlinear response of tungsten disulfide (${\rm WS}_2$) monolayers, prepared by the same method and suspended in acetonitrile (concentration, 40 µg/ml), which only exhibited the third-order nonlinear effect in the same intensity range, up to ${120}\;{{{\rm GW}/{\rm cm}}^2}$. Nonlinear absorption was not observed in either ${\rm MoS}_2$ or ${\rm WS}_2$.
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http://dx.doi.org/10.1364/OL.409578 | DOI Listing |
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December 2024
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
2D materials with atomically thin nature are promising to develop scaled transistors and enable the extreme miniaturization of electronic components. However, batch manufacturing of top-gate 2D transistors remains a challenge since gate dielectrics or gate electrodes transferred from 2D material easily peel away as gate pitch decreases to the nanometer scale during lift-off processes. In this study, an oxidation-assisted etching technique is developed for batch manufacturing of nanopatterned high-κ/metal gate (HKMG) stacks on 2D materials.
View Article and Find Full Text PDFNanotechnology
July 2024
School of Electronics Engineering (SENSE), Vellore Institute of Technology, Chennai, India.
Currently, 2D nanomaterials-based resistive random access memory (RRAMs) are explored on account of their tunable material properties enabling fabrication of low power and flexible RRAM devices. In this work, hybrid MoS-GO based active layer RRAM devices are investigated. A facile hydrothermal co-synthesis approach is used to obtain the hybrid materials and a cost-effective spin coating method adopted for the fabrication of Ag/MoS-GO/ITO RRAM devices.
View Article and Find Full Text PDFEnviron Res
November 2022
Core-Facility Center for Photochemistry & Nanomaterials, Department of Chemistry, Research Institute of Natural Sciences, Gyeongsang National University, Jinju, 52828, Republic of Korea. Electronic address:
The synthesis of bilayer heterojunctions has received considerable attention recently. Fabrication of novel bilayer composites is of significant interest to improve their photocatalytic efficiency. In this study, molybdenum disulfide (MoS), a layered dichalcogenide material exhibiting unique properties, in combination with graphitic carbon nitride (g-CN), a carbon-based layered material, was fabricated with small amounts of zinc oxide (ZnO).
View Article and Find Full Text PDFNanomaterials (Basel)
June 2021
Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Rm. 401 CPT Building, 1001 Ta-Hsueh Road, Hsinchu 300093, Taiwan.
In this study, by combining a large-area MoS monolayer with silver plasmonic nanostructures in a deformable polydimethylsiloxane substrate, we theoretically and experimentally studied the photoluminescence (PL) enhancement of MoS by surface lattice resonance (SLR) modes of different silver plasmonic nanostructures. We also observed the stable PL enhancement of MoS by silver nanodisc arrays under differently applied stretching strains, caused by the mechanical holding effect of the MoS monolayer. We believe the results presented herein can guarantee the possibility of stably enhancing the light emission of transition metal dichalcogenides using SLR modes in a deformable platform.
View Article and Find Full Text PDFThe photoluminescence (PL) efficiency of two-dimensional (2D) transition metal dichalcogenides (TMDs) is extremely low under high power excitation, limiting its potential in display and light-emission application. This arises from the much shorter lifetime of non-radiative recombination than radiative recombination, wherein photo-carriers tend to decay through non-radiative processes. Herein, a "molecular state" near the valence band is successfully introduced into the ${{\rm MoS}_2}$ monolayer to increase the density of radiative states and speed up the exciton relaxation.
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