To overcome the limitation of the small tuning range of 1.3-µm-wavelength distributed Bragg reflector (DBR) lasers using the carrier-plasma effect, we designed a DBR structure with InAlAs carrier confinement layers and an InGaAlAs core layer. We found that the enhanced carrier density and small effective mass of electrons in the core layer of the DBR regions resulted in a wide Bragg wavelength shift. The enhanced refractive-index change due to the new structure enabled us to fabricate the world's first 1.3-µm-wavelength superstructure-grating DBR laser with a quasi-continuous tuning range of over 30 nm.
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http://dx.doi.org/10.1364/OE.411401 | DOI Listing |
Nat Nanotechnol
July 2024
Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
Matrix multiplication acceleration by on-chip (PICs) is emerging as one of the attractive and promising solutions, offering outstanding benefits in speed and bandwidth as compared to non-photonic approaches. Incorporating nonvolatile phase-change materials into PICs or devices enables optical storage and computing, surpassing their electrical counterparts. In this paper, we propose a design of on-chip photonic convolution for optical in-memory computing by integrating the phase change chalcogenide of (GSST) into an asymmetric directional coupler for constructions of an in-memory computing cell, marrying the advantages of both the large bandwidth of (MZIs) and the small size of (MRRs).
View Article and Find Full Text PDFCommun Mater
February 2023
IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland.
Brain-inspired computing emerged as a forefront technology to harness the growing amount of data generated in an increasingly connected society. The complex dynamics involving short- and long-term memory are key to the undisputed performance of biological neural networks. Here, we report on sub-µm-sized artificial synaptic weights exploiting a combination of a ferroelectric space charge effect and oxidation state modulation in the oxide channel of a ferroelectric field effect transistor.
View Article and Find Full Text PDFA narrow linewidth electro-optically tuned multi-channel interference (MCI) widely tunable semiconductor laser based on carrier injection is demonstrated in this paper. The MCI laser with a common phase section and a semiconductor optical amplifier (SOA) is packaged into a 16-pin butterfly box. The laser is characterized by a strategy: shifting the longitudinal mode and then aligning the reflection peak, which obtains a quasi-continuous tuning range over 48 nm.
View Article and Find Full Text PDFOxygen vacancies (V), acting as electron traps, have a significant impact on the persistent luminescence (PersL) property of persistent phosphors. However, the effect of V on PersL remains still unclear enough to limit the development of PersL materials. In this study, the V concentration of the YCeYbAlGaO phosphor is accurately controlled by annealing in air and 10%H/90%Ar atmospheres at various temperatures.
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