Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM.

Micromachines (Basel)

Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain.

Published: December 2020

This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766386PMC
http://dx.doi.org/10.3390/mi11121126DOI Listing

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