2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.
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http://dx.doi.org/10.1002/advs.202002697 | DOI Listing |
Nanoscale
January 2025
School of Science, Jiangsu University of Science and Technology, Zhenjiang 212001, China.
Herein, we propose a new GaN/MoSiP van der Waals (vdWs) heterostructure constructed by vertically stacking GaN and MoSiP monolayers. Its electronic, optical, and photocatalytic properties are explored DFT++BSE calculations. The calculated binding energy and phonon spectrum demonstrated the material's high stabilities.
View Article and Find Full Text PDFACS Nano
January 2025
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao 066004, China.
Moiré superlattices, created by stacking different van der Waals materials at twist angles, have emerged as a versatile platform for exploring intriguing phenomena such as topological properties, superconductivity, the quantum anomalous Hall effect, and the unconventional Stark effect. Additionally, the formation of moiré superlattice potential can generate spontaneous symmetry breaking, leading to an anisotropic optical response and electronic transport behavior. Herein, we propose a two-step chemical vapor deposition (CVD) strategy for synthesizing WS/SbS moiré superlattices.
View Article and Find Full Text PDFNanoscale Horiz
January 2025
Departmento de Fisica, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso, Chile.
Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create ferromagnetic/non-ferromagnetic heterostructures with a controlled layer thickness and nanometer-scale precision. For this, hydrogen ion (H) irradiation is used to reduce the antiferromagnetic nickel oxide (NiO) layer into ferromagnetic Ni with lower fluence than in the case of helium ion (He) irradiation.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
School of Physics and Electronic Information, Weifang University, Weifang 261061, China.
The regulation of the valleytronic properties of two-dimensional materials can contribute to the in-depth study of valley physics and improve its potential for applications in valleytronic devices. Herein, we systematically investigate the electronic properties and the modulation of the valleytronic properties in single-layer NbSeCl. Our results reveal that NbSeCl is a semiconductor with a 105.
View Article and Find Full Text PDFMicron
December 2024
Department of Materials Science and Engineering, Stanford University, Stanford 94305, USA. Electronic address:
Atomic scale, scanning transmission electron microscopy (STEM) analysis of the moiré structures in twisted epitaxial gold nanodiscs encapsulated in twisted bilayer molybdenum disulfide is presented. High angle annular dark field STEM imaging reveals that the period of the moiré patterns between gold and molybdenum disulfide varies with different twist angles of the bilayer molybdenum disulfide, ranging from 1.80 nm (epitaxial alignment of gold) to 1.
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