Universal Inverse Scaling of Exciton-Exciton Annihilation Coefficient with Exciton Lifetime.

Nano Lett

Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States.

Published: January 2021

Be it for essential everyday applications such as bright light-emitting devices or to achieve Bose-Einstein condensation, materials in which high densities of excitons recombine radiatively are crucially important. However, in all excitonic materials, exciton-exciton annihilation (EEA) becomes the dominant loss mechanism at high densities. Typically, a macroscopic parameter named EEA coefficient () is used to compare EEA rates between materials at the same density; higher implies higher EEA rate. Here, we find that the reported values of for 140 different materials is inversely related to the single-exciton lifetime. Since during EEA one exciton must relax to ground state, is proportional to the single-exciton recombination rate. This leads to the counterintuitive observation that the exciton density at which EEA starts to dominate is higher in a material with larger . These results broaden our understanding of EEA across different material systems and provide a vantage point for future excitonic materials and devices.

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Source
http://dx.doi.org/10.1021/acs.nanolett.0c03820DOI Listing

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