We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600-750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600-670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7726554PMC
http://dx.doi.org/10.1038/s41598-020-78436-6DOI Listing

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