2D hexagonal boron nitride (2D-hBN) is a lesser utilised material than other 2D counterparts in electrochemistry due to initial reports of it being non-conductive. As we will demonstrate in this review, this common misconception is being challenged, and researchers are starting to utilise 2D-hBN in the field of electrochemistry, particularly as the basis of electroanalytical sensing platforms. In this critical review, we overview the use of 2D-hBN as an electroanalytical sensing platform summarising recent developments and trends and highlight future developments of this interesting, often overlooked, 2D material.
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http://dx.doi.org/10.1007/s00216-020-03068-8 | DOI Listing |
Nano Lett
January 2025
School of Physics, Xidian University, No. 2 Taibai South Road, Xi'an 710071, China.
Fluorescent nanodots derived from hexagonal boron nitride (-BN) have garnered significant attention over the past decade. As a result, various synthesis methods─encompassing both bottom-up hydrothermal reactions and top-down exfoliation processes─have been deemed "successful" in producing BN nanodots. Nevertheless, this Perspective emphasizes that substantial challenges remain in the synthesis of "true" nanodots composed mainly of -BN units, as many so-called successful syntheses reported in the literature involve some mischaracterizations.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, P. R. China.
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, advanced spatial- and angle-resolved photoemission spectroscopy technique is employed to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials.
View Article and Find Full Text PDFUsing the first principle calculations, we propose a boron and nitrogen cluster incorporated graphene system for efficient valley polarization. The broken spatial inversion symmetry results in high Berry curvature at and valleys of the hexagonal Brillouin zone in this semiconducting system. The consideration of excitonic quasiparticles within the approximation along with their scattering processes using the many-body Bethe-Salpeter equation gives rise to an optical gap of 1.
View Article and Find Full Text PDFNature
January 2025
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Electrons in topological flat bands can form new topological states driven by correlation effects. The pentalayer rhombohedral graphene/hexagonal boron nitride (hBN) moiré superlattice was shown to host fractional quantum anomalous Hall effect (FQAHE) at approximately 400 mK (ref. ), triggering discussions around the underlying mechanism and role of moiré effects.
View Article and Find Full Text PDFNat Mater
January 2025
Department of Physics, Harvard University, Cambridge, MA, USA.
Atomically thin van der Waals (vdW) films provide a material platform for the epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here we report the double-sided epitaxy of vdW layered materials through atomic membranes.
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