AI Article Synopsis

  • Researchers previously attempted to manipulate ferromagnetism in complex oxides like LaSrMnO (LSMO) using high-dielectric or ferroelectric materials through charge carrier changes.
  • The study shows that using a ferroelectric copolymer, P(VDF-TrFE), as a gate dielectric effectively modulates LSMO's ferromagnetism without requiring high voltages, enhancing tunability through low-voltage pulse chains.
  • Techniques like X-ray photoelectron spectroscopy demonstrate that this tuning is due to oxygen vacancy changes in the LSMO layer, linking these vacancies to alterations in Mn ion valence states, suggesting broader applications for electric field-controlled magnetic devices.

Article Abstract

Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as LaSrMnO (LSMO), are based on electrostatically induced charge carrier changes through high- dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.

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Source
http://dx.doi.org/10.1021/acsami.0c14172DOI Listing

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