Gallium antimonide (GaSb) is a group III-V compound semiconductor with a comparatively narrow band gap energy (0.73 eV at 300 K) that allows efficient operation in the near-infrared region. This property may be useful in developing new biomedical instruments such as epidermal optoelectronic devices. The present study investigated the absorption of GaSb in pig skin in vitro for 24 h using Franz cells. A donor solution was prepared by soaking GaSb thin films in synthetic sweat. The results showed that both gallium and antimony penetrated the skin, and permeation and resorption occurred for gallium. Histopathological findings showed no inflammatory responses in pig skin exposed to GaSb for 24 h. Cytotoxicity was significantly elevated after 3 and 7 days, and pro-inflammatory cytokines and IL-8 levels were low after 1 and 3 days but elevated 7 days following the direct culturing of human dermal fibroblasts (HDF) on GaSb thin films. These results demonstrate that the short-term cytotoxicity and pro-inflammatory effect of GaSb on HDF were relatively low.
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http://dx.doi.org/10.1016/j.tiv.2020.105064 | DOI Listing |
Micromachines (Basel)
September 2023
Department of Materials Science and Engineering, NC State University, Raleigh, NC 27606, USA.
A wireless optical power transfer (WOPT) system using an erbium-doped fiber amplifier as an optical power source is proposed to achieve long range, high power, and hazard-free power delivery in the air. The transmitter generates a wide band of amplified spontaneous emission around the central wavelength of 1550 nm. A wavelength division multiplexing (WDM) filter (λ=1552.
View Article and Find Full Text PDFSensors (Basel)
July 2022
Łukasiewicz Research Network-Institute of Microelectronics and Photonics, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland.
The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films.
View Article and Find Full Text PDFNanomaterials (Basel)
June 2022
Department of Electronic & Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, UK.
The epitaxial deposition of a precise number, or even fractions, of monolayers of indium (In)-rich semiconductors onto gallium arsenide (GaAs) substrates enables the creation of quantum dots based on InAs, InGaAs and indium phosphide (InP) for infrared light-emitting and laser diodes and the formation of indium antimonide (InSb)/GaAs strained layer superlattices. Here, a facile method based on energy-dispersive X-ray spectroscopy (EDXS) in a scanning electron microscope (SEM) is presented that allows the indium content of a single semiconductor layer deposited on a gallium arsenide substrate to be measured with relatively high accuracy (±0.7 monolayers).
View Article and Find Full Text PDFMaterials (Basel)
August 2021
Institute of Power Engineering, College of Engineering, Universiti Tenaga Nasional, Kajang 43000, Malaysia.
Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy.
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