Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, while discussing only some examples, I will describe how silicon Complementary-Metal-Oxide-Semiconductor (CMOS) compatible materials have been able to provide platforms for the observation of some of the most unusual transport phenomena in condensed matter physics.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7515173 | PMC |
http://dx.doi.org/10.3390/e21070676 | DOI Listing |
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