Weak Localization in Polycrystalline Tin Dioxide Films.

Materials (Basel)

Faculty of Physics, Vilnius University, Sauletekio av. 9, 10222 Vilnius, Lithuania.

Published: November 2020

AI Article Synopsis

  • - The study focused on the electrical and magnetotransport properties of nanocrystalline tin dioxide films, analyzing performance across temperatures from 4 to 300 K and under magnetic fields up to 8 T.
  • - The films were created using reactive DC magnetron sputtering of tin with subsequent temperature annealing, and their rutile structure was confirmed through X-ray diffraction analysis.
  • - The findings included explanations of resistance and negative magnetoresistance using a model that incorporates quantum corrections, revealing that the weak localization in the films exhibited a three-dimensional character based on the evaluated electron dephasing length.

Article Abstract

The electrical and magnetotransport properties of nanocrystalline tin dioxide films were studied in the temperature range of 4-300 K and in magnetic fields up to 8 T. SnO films were fabricated by reactive direct current (DC) magnetron sputtering of a tin target with following 2 stage temperature annealing of synthesized samples. The nanocrystalline rutile structure of films was confirmed by X-ray diffraction analysis. The temperature dependences of the resistance () and the negative magnetoresistance (MR) were explained within the frame of a model, taking into account quantum corrections to the classical Drude conductivity. Extracted from the () and () dependences electron dephasing length values indicate the 3D character of the weak localization (WL) in our samples.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730622PMC
http://dx.doi.org/10.3390/ma13235415DOI Listing

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