Bismuth ferrite nanoparticles with an average particle diameter of 45 nm and spatial symmetry R3c were obtained by combustion of organic nitrate precursors. BiFeO-silicone nanocomposites with various concentrations of nanoparticles were obtained by mixing with a solution of silicone. Models of piezoelectric generators were made by applying nanocomposites on a glass substrate and using aluminum foil as contacts. The thickness of the layers was about 230 μm. There was a proportional relationship between the different concentrations of nanoparticles and the detected potential. The output voltages were 0.028, 0.055, and 0.17 V with mass loads of 10, 30, and 50 mass%, respectively.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7728058 | PMC |
| http://dx.doi.org/10.3390/s20236736 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Self-Poled Bismuth Ferrite Thin Film Micromachined for Piezoelectric Ultrasound Transducers.
Adv Mater
December 2024
Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Innovation Campus, North Wollongong, NSW, 2500, Australia.
Piezoelectric micromachined ultrasound transducers (pMUTs), especially those using lead-free materials, are crucial next-generation microdevices for precise actuation and sensing, driving advancements in medical, industrial, and environmental applications. Bismuth ferrite (BiFeO) is emerging as a promising lead-free piezoelectric material to replace Pb(Zr,Ti)O in pMUTs. Despite its potential, the integration of BiFeO thin films into pMUTs has been hindered by poling issues.
View Article and Find Full Text PDFFerroelectric Domain Wall Warp Memristor.
ACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia.
Domain walls are quasi-one-dimensional topological defects in ferroic materials, which can harbor emergent functionalities. In the case of ferroelectric domain wall (FEDW) devices, an exciting frontier has emerged: memristor-based information storage and processing approaches. Memristor solid-state FEDW devices presented thus far, however predominantly utilize a complex network of domain walls to achieve the desired regulation of density and charge state.
View Article and Find Full Text PDFNanostructured bismuth ferrite nanoparticles: synthesis, characterization, electrical/magnetic properties and photocatalytic performance.
Phys Chem Chem Phys
January 2025
Central Labs, King Khalid University, P.O. Box 960, AlQura'a, Abha, Saudi Arabia.
Nanostructured bismuth ferrite (BiFeO) single-phase nanoparticles with 76.2% crystallinity and 100% perovskite structure were synthesized using a co-precipitation method. The X-ray diffraction pattern confirmed the perovskite structure of BFO, and Rietveld refinement demonstrated the presence of a triclinic structure with the 1 space group.
View Article and Find Full Text PDFAdsorptive performance of bismuth-doped Ni-Zn-Co ferrite nanoparticles for the removal of methylene blue dye.
Environ Sci Pollut Res Int
January 2025
Physics Department, Faculty of Science, Alexandria University, Alexandria, Egypt.
Cancer, kidney and liver damage, and even death result from water contaminated with textile dyes. This study highlighted a key approach for treating water contaminated with methylene blue (MB) dye. Bismuth-doped ferrite nanoparticles (NiZnCoBiFeO) with 0 ≤ × ≤ 0.
View Article and Find Full Text PDFTuning Self-Polarization of Epitaxial BiFeO Thin Films through Interface Effects.
ACS Appl Mater Interfaces
December 2024
Intelligent Materials Lab, School of Physics and Materials Science, Nanchang University, Nanchang 330031, People's Republic of China.
Interface effects and strain engineering have emerged as critical strategies for modulating polarization and internal electric fields in ferroelectric materials, playing a vital role in exploring coupling mechanisms and developing ferroelectric diode devices. In this study, we selected BiFeO as a representative ferroelectric material and utilized interface engineering to control its polarization. By precisely manipulating the atomic stacking sequence at the interface, we influenced the electrostatic potential step across the interface, resulting in a bias voltage in the ferroelectric hysteresis loops that defined the ferroelectric state.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!