The novel severe acute respiratory syndrome corona virus 2 (SARS-CoV-2) is causing an unprecedented pandemic, threatening planetary health, society, and economy. Genomic surveillance continues to be a critical effort toward tracking the virus and containing its spread, and more genomes from diverse geographical areas and different time points are needed to provide an appropriate representation of the virus evolution. In this study, we report the successful assembly of one single gapless, unambiguous contiguous sequence representing the complete viral genome from a nasopharyngeal swab of an infected health care worker in Cairo, Egypt. The sequence has all typical features of SARS-CoV-2 genomes, with no protein-disrupting mutations. However, three mutations are worth highlighting and future tracking: a synonymous mutation causing a rare spike S813I variation and two less frequent ones leading to an A41V variation in NSP3, encoded by ORF1a (ORF1a A895V), and a Q677H variation in the spike protein. Both affected proteins, S and NSP3, are relevant to vaccine and drug development. Although the genome, named CU_S3, belongs to the prevalent global genotype, marked by the D614G spike variation, the combined variations in the spike proteins and ORF1a do not co-occur in any of the 197,000 genomes reported to date. Future studies will assess the biological, pathogenic, and epidemiological implications of this set of genetic variations. This line of research is needed to inform vaccine and therapeutic innovation to stem the COVID-19 pandemic.
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http://dx.doi.org/10.1089/omi.2020.0194 | DOI Listing |
Phys Rev Lett
May 2024
Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
The emergent higher-order topological insulators significantly deepen our understanding of topological physics. Recently, the study has been extended to topological semimetals featuring gapless bulk band nodes. To date, higher-order nodal point and line semimetals have been successfully realized in different physical platforms.
View Article and Find Full Text PDFAdv Mater
June 2024
School of Physics and Astronomy, Monash University, Clayton, Victoria, 3168, Australia.
Langmuir
January 2024
School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
The development of universal anode materials with superlative electrochemical performance poses a great challenge for rechargeable alkali metal (AM) ion battery technologies. In the present work, the viability of the gapless Dirac -BN (tetragonal boron nitride) monolayer as a lightweight binder-free anode has been systematically evaluated via comprehensive first-principles calculations. Aside from the desirable electronic conductivity, the -BN monolayer exhibits an excellent ionic conductivity as well due to its moderate affinity for Li, Na, and K atoms with favorable in-plane barriers of 0.
View Article and Find Full Text PDFSci Bull (Beijing)
February 2023
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China. Electronic address:
Sci Rep
March 2022
Institute for Microelectronics and Microsystems, CNR-IMM Unit of Agrate Brianza, Via C. Olivetti 2, 20864, Agrate Brianza, Italy.
Recently, the topological insulators (TIs) antimony telluride (SbTe) and bismuth telluride (BiTe) are attracting high interest for applications based on spin-charge interconversion mechanisms. Aiming to make a step toward the technology transfer, it is of major importance to achieve and investigate epitaxial quality-TIs on large area Si-based substrates. In view of that, we report here magnetotransport and angle-resolved photoemission spectroscopy (ARPES) studies on SbTe and BiTe thin films grown by metal organic chemical vapor deposition (MOCVD) on top of 4″ Si(111) substrates.
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