We study the influence of superconductivity on the formation of the localized magnetic moment for a single-level quantum impurity embedded in an s-wave Bardeen-Cooper-Schrieffer (BCS) superconducting medium, modeled by single-impurity Anderson Hamiltonian. We have combined Bogoliubov transformation with Green's function method within self-consistent Hartree-Fock Mean Field approximation to analyze the conditions necessary in metal (in the superconducting) for the formation of the magnetic moment at the impurity site for the low-frequency limit $|\omega|<<\Delta_{sc}$ as well as for the finite superconducting gap $\Delta_{sc}$. We have compared these results with other theoretical results and with the single-level quantum impurity embedded in the normal metallic host. Further we analyze the electronic spectral density of the quantum impurity embedded in superconducting host with the finite superconducting gap to study the sub-gap states as a function of impurity parameters.
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http://dx.doi.org/10.1088/1361-648X/abcc0e | DOI Listing |
RSC Adv
January 2025
Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
In this work, Ge vacancies and doping with transition metals (Mn and Fe) are proposed to modulate the electronic and magnetic properties of GeP monolayers. A pristine GeP monolayer is a non-magnetic two-dimensional (2D) material, exhibiting indirect gap semiconductor behavior with an energy gap of 1.34(2.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States.
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of -VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains.
View Article and Find Full Text PDFACS Mater Au
January 2025
Department of Chemistry, Clemson University, Clemson, South Carolina 29634, United States.
Lanthanide materials with a 4f electron configuration (S) offer an exciting system for realizing multiple addressable spin states for qubit design. While the S ground state of 4f free ions displays an isotropic character, breaking degeneracy of this ground state and excited states can be achieved through local symmetry of the lanthanide and the choice of ligands. This makes Eu attractive as it mirrors Gd in exhibiting the S ground state, capable of seven spin-allowed transitions.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen, Germany.
Within the framework of surface-adsorbate interactions relevant to chemical reactions of spent nuclear fuel, the study of actinide oxide systems remains one of the most challenging tasks at both the experimental and computational levels. Consequently, our understanding of the effect of their unique electronic configurations on surface reactions lags behind that of d-block oxides. To investigate the surface properties of this system, we present the first infrared spectroscopy analysis of carbon monoxide (CO) interaction with a monocrystalline actinide oxide, UO(111).
View Article and Find Full Text PDFNano Lett
January 2025
Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States.
Nonvolatile control of spin order or spin excitations offers a promising avenue for advancing spintronics; however, practical implementation remains challenging. In this Letter, we propose a general framework to realize electrical control of magnons in 2D magnetic insulators. We demonstrate that in bilayer ferromagnetic insulators with strong spin-layer coupling, the electric field can effectively manipulate the spin exchange interactions between the layers, enabling nonvolatile control of the corresponding magnons.
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