Nodal-line half-metals (NLHMs) are highly desirable for future spintronic devices due to their exotic quantum properties. However, the experimental realization in spin-polarized materials is nontrivial to date. Herein we perform first-principles calculations to demonstrate a 2D honeycomb, AgN, as a promising candidate of NLHMs, which is thermodynamically and dynamically stable. Band structure analysis reveals that two concentric NLs coexist centered at a Γ point near EF, accompanied by the electron and hole pockets that touch each other linearly with single-spin components. Inclusion of SOC can enrich the electronic structures of AgN, sensitive to the protection of mirror reflection symmetry: the NLHM survives if the spin is perpendicular to the Mz mirror plane, while it tunes into Wyle nodal-points by rotating spins from the out-of-plane to the in-plane direction. The characteristics of HM and NL can be well maintained on semiconducting h-BN and is immune to mechanical strains. These tunable magnetic properties render 2D AgN suitable for exotic quantum transports in nodal fermions as well as related spintronic devices.
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Sci Adv
January 2025
Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore.
Combining physics with computational models is increasingly recognized for enhancing the performance and energy efficiency in neural networks. Physical reservoir computing uses material dynamics of physical substrates for temporal data processing. Despite the ease of training, building an efficient reservoir remains challenging.
View Article and Find Full Text PDFACS Nano
January 2025
School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni 752050, India.
Topological magnetic skyrmions with helicity state degrees of freedom in centrosymmetric magnets possess great potential for advanced spintronics applications and quantum computing. Till date, the skyrmion study in this class of materials mostly remains focused to collinear ferromagnets with uniaxial magnetic anisotropy. Here, we present a combined theoretical and experimental study on the competing magnetic exchange-induced evolution of noncollinear magnetic ground states and its impact on the skyrmion formation in a series of centrosymmetric hexagonal noncollinear magnets, MnFeCoGe.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Institute of Information Photonics Technology, School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China.
Nonlinear optics, a critical branch of modern optics, presents unique potential in the study of two-dimensional (2D) magnetic materials. These materials, characterized by their ultra-thin geometry, long-range magnetic order, and diverse electronic properties, serve as an exceptional platform for exploring nonlinear optical effects. Under strong light fields, 2D magnetic materials exhibit significant nonlinear optical responses, enabling advancements in novel optoelectronic devices.
View Article and Find Full Text PDFAdv Mater
January 2025
School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, University of Science and Technology Beijing, Beijing, 100083, China.
Magnetic antiskyrmions, the anti-quasiparticles of magnetic skyrmions, possess alternating Bloch- and Néel-type spin spirals, rendering them promising for advanced spintronics-based information storage. To date, antiskyrmions are demonstrated in a few bulk materials featuring anisotropic Dzyaloshinskii-Moriya interactions and a limited number of artificial multilayers. Identifying novel film materials capable of hosting isolated antiskyrmions is critical for memory applications in topological spintronics.
View Article and Find Full Text PDFHeliyon
January 2025
National Institute of Materials Physics, 077125 Magurele, Ilfov, Romania.
Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K.
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