Antimony selenide (SbSe) is a material widely used in photodetectors and relatively new as a possible material for thermoelectric applications. Taking advantage of the new properties after nanoscale fabrication, this material shows great potential for the development of efficient low temperature thermoelectric devices. Here we study the synthesis, the crystal properties and the thermal and thermoelectric transport response of SbSe hexagonal nanotubes (HNT) in the temperature range between 120 and 370 K. HNT have a moderate electrical conductivity ∼10 S m while maintaining a reasonable Seebeck coefficient ∼430 μV K at 370 K. The electrical conductivity in SbSe HNT is about 5 orders of magnitude larger and its thermal conductivity one half of what is found in bulk. Moreover, the calculated figure of merit (ZT) at room temperature is the largest value reported in antimony selenide 1D structures.
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Article Synopsis
- * It highlights recent findings on antimony trichalcogenide and chalcohalide materials, which can recover from photoinduced damage through a reversible phase transition, providing a basis for studying their unique properties.
- * The study reveals that as bismuth replaces antimony in these materials, the ability to recover from damage decreases, stressing the importance of specific bonding characteristics for effective self-healing in semiconductors.
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