BiSe is a well-established topological insulator (TI) having spin momentum locked Dirac surface states at room temperature and predicted to exhibit high spin to charge conversion efficiency (SCCE) for spintronics applications. The SCCE in TIs is characterized by an inverse Edelstein effect length (λ). We report an λ of ∼0.36 nm, which is the highest ever observed in BiSe. Here, we performed spin pumping and inverse spin Hall effect (ISHE) in an electron beam-evaporated BiSe/CoFeB bilayer. The BiSe thickness dependence of λ, perpendicular surface anisotropy (), spin mixing conductance, and spin Hall angle confirmed that spin to charge conversion is due to spin momentum locked Dirac surface states. We propose that the role of surface states in SCCE can be understood by the evaluation of . The SCCE is found to be high when the value of is small.
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